RAM is a key piece of mobile hardware which is all too often overlooked when we talk about smartphone specifications, but it’s ever so important for our increasingly sophisticated mobile applications. We already know that Samsung is working on its own four gigabit (Gb) LPDDR3 mobile memory chips, which should offer a 30% improvement in performance and a 20% saving in energy consumption when compared to a 30nm LPDDR3 DRAM chip.
However SK Hynix appears to be one-upping the smartphone giant, as the company has been working on its own 20nm eight gigabit (the equivalent of 1GB) memory chips, which can be stacked together to provide a whopping 4GB RAM in a single package. For the sake of comparison, Samsung’s newest mobile memory chips will only offer 2GB of RAM for mobile devices.
But equally as important as the larger memory size, SK Hynix’s new RAM will be built on high-density LPDDR3 which offers a higher data transfer rate, greater bandwidth, and improved power efficiency over older designs. In terms of raw performance this new RAM will have its data transmission speed sped up to 2,133Mbps, which is a fair bit faster than the 1,600Mbps offered by existing LPDDR3 handsets such as the new Samsung Galaxy S4, and doubles the speed of older LPDDR2 memory.
According to SK Hynix’s press release, we should a high density LPDDR3 memory products with more than 2GB of memory appear in high-end mobile devices sometime in the second half of this year. Unfortunately though, mass production of these larger memory chips won’t begin until the end of the year, so we probably won’t be able to get our hands on one until sometime in the 2014.
Source: Androidauthority
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